IS31AP2036 integrated silicon solution, inc. ? www.issi.com rev. 00a, 12/23/2013 1 high efficiency, class-k audio power amplifier with integrated charge pump converter advanced information january 2014 general description the IS31AP2036 is a class-k audio power amplifier with high efficiency and automatic gain control. it drives up to 2.0w (10% thd+n) into an 8 ? speaker from a 4.2v v cc supply. the IS31AP2036 integrates advanced k-charge pump which increases efficiency up to 92% and whole power amplifier efficiency to 75%. the output power will be maintained in 0.8w, 1.0w and 1.2w. the IS31AP2036 provides low cost, space saving solution for portable equipments which need audio output with higher power by boosting up supply voltage. its external components just include a few capacitors and resistors (no inductor). the IS31AP2036 use fully differential design to reduce rf noise. the IS31AP2036 integrates de-pop circuitry to reduce pop and click noise during power on/off or shutdown enable operation. the IS31AP2036 also integrates thermal and short circuit protection function. IS31AP2036 is available in fc-16 (2mm 2mm) package. it operates from 3.0v to 5.0v over the temperature range of -40c to +85c. features ? operates from 3.0v to 5.0v ? advanced k-charge pump technology, efficiency up to 92% ? low emi ? -65db (217hz) high psrr ? 0.2% low thd+n ? new agc function ? pulse count control serial interface ? output power in 0.8w, 1w and 1.2w levels ? thermal and short-circuit protection ? integrated click-and-pop suppression circuitry ? available in fc-16 (2mm 2mm) package applications ? smart phones ? cellular phones ? pdas ? gps ? portable electronics typical application circuit figure 1 typical application circuit (differential input)
IS31AP2036 integrated silicon solution, inc. ? www.issi.com rev. 00a, 12/23/2013 2 vcc pvcc sdb gnd IS31AP2036 in- a1 a2 out d4 out b4 d3 c2~c4 10 f a4 c2n b1,b2 in+ a3,b3 0.1 f 220pf 100k v battery c in 15nf r in 3k c in 15nf r in 3k single-ended input 4.7 f c1n c1 2.2 f c1p d2 c2p d1 2.2 f 1nf 1nf mode control figure 2 typical application circ uit (single-ended input)
IS31AP2036 integrated silicon solution, inc. ? www.issi.com rev. 00a, 12/23/2013 3 pin configuration package pin configuration (top view) fc-16 a1 a2 a3 b1 b2 b3 c1 c2 c3 in+ in- vcc c2n c2n vcc c1n gnd gnd a4 b4 c4 sdb out+ gnd d1 d2 d3 c2p c1p pvcc d4 out- pin description no. pin description a1 in+ positive audio input. a2 in- negative audio input. a3, b3 vcc power supply. a4 sdb shutdown pin. active low. b1, b2 c2n negative input for external flying cap 2. b4 out+ positive audio output. c1 c1n negative input for external flying cap 1. c2~c4 gnd amplifier supply voltage. d1 c2p positive input for external flying cap 2. d2 c1p positive input for external flying cap 1. d3 pvcc charge pump output voltage. d4 out- negative audio output.
IS31AP2036 integrated silicon solution, inc. ? www.issi.com rev. 00a, 12/23/2013 4 ordering information (tbd) industrial range: -40c to +85c order part no. package qty/reel IS31AP2036-xxls2-tr fc-16, lead-free 2500 copyright ? ? ? 2013 ? integrated ? silicon ? solution, ? inc. ? all ? rights ? reserved. ? issi ? reserves ? the ? right ? to ? make ? changes ? to ? this ? specification ? and ? its ? products ? at ? any ? time ? without ? notice. ? issi ? assumes ? no ? liability ? arising ? out ? of ? the ? application ? or ? use ? of ? any ? information, ? products ? or ? services ? described ? herein. ? customers ? are ? advised ? to ? obtain ? the ? latest ? version ? of ? this ? device ? specification ? before ? relying ? on ? any ? published ? information ? and ? before ? placing ? orders ? for ? products. ? integrated ? silicon ? solution, ? inc. ? does ? not ? recommend ? the ? use ? of ? any ? of ? its ? products ? in ? life ? support ? applications ? where ? the ? failure ? or ? malfunction ? of ? the ? product ? can ? reasonably ? be ? expected ? to ? cause ? failure ? of ? the ? life ? support ? system ? or ? to ? significantly ? affect ? its ? safety ? or ? effectiveness. ? products ? are ? not ? authorized ? for ? use ? in ? such ? applications ? unless ? integrated ? silicon ? solution, ? inc. ? receives ? written ? assurance ? to ? its ? satisfaction, ? that: ? a.) ? the ? risk ? of ? injury ? or ? damage ? has ? been ? minimized; ? b.) ? the ? user ? assume ? all ? such ? risks; ? and ? c.) ? potential ? liability ? of ? integrated ? silicon ? solution, ? inc ? is ? adequately ? protected ? under ? the ? circumstances
IS31AP2036 integrated silicon solution, inc. ? www.issi.com rev. 00a, 12/23/2013 5 absolute maximum ratings supply voltage, v cc - 0.3v ~ +6.0v voltage at in+ and in- pins - 0.3v ~ v cc +0.3v maximum junction temperature, t jmax 125c storage temperature range, t stg - 65c ~ +150c operating temperature range, t a - 40c ~ +85c thermal resistance, junction to ambient, r ja 69c/w esd (hbm) esd (cdm) tbd tbd note: stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only and functional operation of the device at t hese or any other condition beyond those i ndicated in the operational sections of th e specifications is not implied. exposure to absolute maximum rating condi tions for extended periods may affect device reliability. dc characteristics (tbd) t a = 25c, v cc = 3.0v ~ 5.0v, unless otherwise noted. typical value are t a = 25c, v cc = 3.6v. symbol parameter condition min. typ. max. unit v cc supply voltage 3.0 5.0 v i cc quiescent current v cc = 3.6v, no load, no input 9.5 ma i sd shutdown current v cc =3.6v, v sdb = 0v 1 a f osc clock frequency v cc = 2.5v~4.5v 600 800 1000 khz a v output gain r in = 3k ? 16.3 v/v t on turn on time 40 ms |v os | output offset voltage v cc = 2.5v~4.5v, no input -30 0 30 mv r int internal input resistor 16.5 k ? v ih input logic high voltage 1.3 v cc v v il input logic low voltage 0 0.35 v t agc thermal agc threshold temperature 150 c t agc_hys thermal agc hysteresis temperature 20 c t otp over temperature protection (note 1) 160 c t top_hys hysteresis temperature (note 1) 30 c k-charge pump pv cc charge pump output voltage v cc = 3.0v~3.8v 1.5v cc v v cc >3.8v 5.8 v v hys ovp hysteresis voltage v cc >3.8v 50 mv efficiency v cc = 4.2v 92 % t st soft start time c out = 4.7f, no load 1.0 1.2 1.4 ms i l pvcc short to gnd limit current 350 ma
IS31AP2036 integrated silicon solution, inc. ? www.issi.com rev. 00a, 12/23/2013 6 ac characteristics (note 1) t a = 25c, v cc = 3.6v, unless otherwise noted. symbol parameter condition min. typ. max. unit po output power, mode 4 thd+n = 10%, f = 1khz r l = 8 ? +33h v cc = 3.6v 1.5 w v cc = 4.2v 2.0 thd+n = 1%, f = 1khz r l = 8 ? +33h v cc = 3.6v 1.23 v cc = 4.2v 1.65 p ncn ncn output power v cc = 4.2v, r l = 8 ? +33h, thd+n = 0.25% mode 1 1.2 w mode 2 1.0 mode 3 0.8 thd+n total harmonic distortion plus noise v cc = 4.2v, p o = 1w, r l = 8 ? +33h f = 1khz, mode 1 0.2 % v cc = 4.2v, p o = 1.2w, r l = 8 ? +33h f = 1khz, mode 4 0.2 t wu wake-up time from shutdown 40 ms efficiency v cc = 4.2v, p o = 1.2w, r l = 8 ? 75 % psrr power supply rejection ratio v cc = 4.2v, v p-p = 200mv, r l = 8 ? , f = 217hz -53 -65 db v cc = 4.2v, v p-p = 200mv, r l = 8 ? , f = 1khz -53 -65 ncn t at attack time 40 ms t rl release time 1.2 s a max max attenuation gain -13.5 db pulse count control t l mode control low time v cc = 2.5v~4.5v 0.75 2 10 s t h mode control high time v cc = 2.5v~4.5v 0.75 2 10 s t lat mode latch up time v cc = 2.5v~4.5v 150 500 s t off shutdown time v cc = 2.5v~4.5v 150 500 s note 1: guaranteed by design.
IS31AP2036 integrated silicon solution, inc. ? www.issi.com rev. 00a, 12/23/2013 7 classification reflow profiles profile feature pb-free assembly preheat & soak temperature min (tsmin) temperature max (tsmax) time (tsmin to tsmax) (ts) 150c 200c 60-120 seconds average ramp-up rate (tsmax to tp) 3c/second max. liquidous temperature (tl) time at liquidous (tl) 217c 60-150 seconds peak package body temperature (tp)* max 260c time (tp)** within 5c of the specified classification temperature (tc) max 30 seconds average ramp-down rate (tp to tsmax) 6c/second max. time 25c to peak temperature 8 minutes max. figure 13 classification profile
IS31AP2036 integrated silicon solution, inc. ? www.issi.com rev. 00a, 12/23/2013 8 package information fc-16 (tbd) note: all dimensions in millimet ers unless otherwise stated.
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